- 40 ab s olut e maximum r at ing s (t a =25 c unles s otherwis e noted) p arameter s ymbol limit unit drain-s ource voltage v ds v g ate-s ource voltage v g s 20 v drain c urrent-c ontinuous @ t j =25 c -p uls ed i d - 14 -1.25 1.25 a a a w i dm drain-s ource diode f orward c urrent i s maximum p ower dis s ipation p d operating j unction and s torage temperature r ange t j , t s t g -55 to 150 c t he r mal c har ac t e r is t ic s t hermal r es is tance, j unction-to-ambient r j a 100 /w c a a b s ot -23 p ackage. p r oduc t s ummar y v ds s i d r ds (on) ( m ) max -3.5a 65 @ v g s = -10v 85 @ v g s = -4.5v f e at ur e s s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. -40v s t s 4501 g d s s ot-23 s g d -3.5 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
e l e c t r ic al c har ac t e r is t ic s (t a 25 c unles s otherwis e noted) = p arameter s ymbol c ondition min typ max unit of f c har ac t e r is t ic s drain-s ource b reakdown voltage b v ds s = v g s 0v, i d -250ua = -40 v zero g ate voltage drain c urrent i ds s v ds -32v, v g s 0v = = -1 g ate-b ody leakage i g s s v g s 20v, v ds 0v = = 100 na on c har ac t e r is t ic s a g ate t hres hold voltage v g s (th) v ds v g s , i d = -250ua = v drain-s ource on-s tate r es is tance r ds (on) v g s -10v, i d -3.5a v g s -4.5v, i d -2a 85 on-s tate drain c urrent i d(on) v ds = -5v, v g s = -10v a s f orward trans conductance f s g v ds -10v, i d -3.5a dy namic c har ac t e r is t ic s b input c apacitance c is s c r s s c os s output c apacitance r evers e trans fer c apacitance v ds =-25v, v g s = 0v f =1.0mh z p f p f p f c = = = = = = 65 ua m ohm m ohm -20 60 100 660 8.7 s wit c hing c har ac t e r is t ic s b turn-on delay time r is e time turn-off delay time t d(on) t r t d(of f ) t f v dd = -20v i d = -1a v g s = -10v r g e n = 3.3 ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =-28v, i d = -3.5 a v g s =-10v nc nc nc f all t ime nc 13 22 72 11 10.5 3.8 1.4 6.5 -1 -1.6 -3 54 70 v ds =-28v, i d =-3.5a,v g s =-10v v ds =-28v, i d =-3.5a,v g s =-4.5v s t s 4501 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
p arameter s ymbol c ondition min typ max unit e l e c t r ic al c har ac t e r is t ic s (t a =25 c unles s otherwis e noted) dr ain-s o ur c e dio de c har ac t e r is t ic s diode f orward voltage v s d v g s = 0v, is = -1.25 a v b notes c.g uaranteed by des ign, not s ubject to production tes ting. b.p uls e tes t:p uls e width 300us , duty c ycle 2%. a.s urface mounted on f r 4 b oard, t 10s ec. -0.75 -1.2 s t s 4501 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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